sot-363 sot-363 plastic-encapsulate transistors UMT2N general purpose transistor (dual transistor) features two 2sa1037ak chips in sot-363 package marking: t2 absolute maximum ratings (t a =25 ) symbol parameter value unit v cbo collector-base voltage -60 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -6 v i c collector current -150 ma p c collector power dissipation 150 mw r ja thermal resistance from junction to ambient 833 /w t j junction temperature 150 t stg storage temperature -55~+150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-50 a, i e =0 -60 v collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e =-50 a, i c =0 -6 v collector cut-off current i cbo v cb =-60v, i e =0 -0.1 a emitter cut-off current i ebo v eb =-6v, i c =0 -0.1 a dc current gain h fe v ce =-6v, i c =-1ma 120 560 collector-emitter saturation voltage v ce(sat) i c =-50ma, i b =-5ma -0.5 v transition frequency f t v ce =-12v, i c =-2ma, f=100mhz 140 mhz collector output capacitance c ob v cb =-12v, i e =0, f=1mhz 5 pf 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,mar,2012
-0.1 -1 -10 1 10 -1 -10 -100 0 50 100 150 200 250 -0.1 -1 -10 -100 0 100 200 300 400 500 600 0 25 50 75 100 125 150 0 50 100 150 200 -0.1 -1 -10 -100 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -0.1 -1 -10 -100 -10 -100 -0 -2 -4 -6 -8 -10 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 f=1mhz i e =0 / i c =0 t a =25 UMT2N reverse voltage v (v) capacitance c (pf) v cb / v eb c ob / c ib ?? c ib c ob transition frequency f t (mhz) collector current i c (ma) v ce =-12v t a =25 i c f t ?? -150 v ce = -6v t a =100 t a =25 collector current i c (ma) dc current gain h fe i c h fe ?? collector power dissipation p c (mw) ambient temperature t a ( ) p c ?? t a -150 collector current i c (ma) base-emitter saturation voltage v besat (v) t a =25 t a =100 =10 i c v besat ?? -300 -30 20 -20 -150 t a =25 t a =100 =10 v cesat ?? i c collector-emitter saturation voltage v cesat (mv) collector current i c (ma) common emitter t a =25 -8.0ua -7.2ua -6.4ua -5.6ua -4.8ua -4.0ua -3.2ua -2.4ua -1.6ua i b =-0.8ua collector-emitter voltage v ce (v) collector current i c (ma) static characteristic 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,mar,2012
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